Scaling of GaSb/InAs Vertical Nanowire Esaki Diodes Down to Sub-10-nm Diameter

This work studies the diameter scaling behavior of broken-band GaSb/InAs vertical nanowire (VNW) Esaki diodes. A top-down fabrication process involving precise reactive-ion etching and alcohol-based digital etch has yielded devices with a tunneling junction below 10 nm. Clear peaks are observed an average peak current density 1MA/cm 2 ideal areal over two orders magnitude in diameter. In non-Esaki branch, 4 MA/cm is demonstrated at 0.3 V. suggests great potential for system ultralow power VNW tunnel FET (TFET) applications. Toward evaluating ultimate TFET this material system, we have extracted series resistance our diodes developed model it. We find that main contribution to comes from GaSb body. Comparatively, contact top minor impact spite tiny Ni/InAs area. Self-consistent quantum transport simulations based on non-equilibrium Green’s function (NEGF) formalism carried out. simulate different dimensions, is, one strong confinement bulk-like behavior. Inelastic due phonon emission found both widen suppress branch.